A Two-Dimensional Model for the Excess Interstitial Distribution in Silicon During Thermal Oxidation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Y.S.Shin | ko |
| dc.contributor.author | Kim, Choong Ki | ko |
| dc.date.accessioned | 2013-02-25T08:08:53Z | - |
| dc.date.available | 2013-02-25T08:08:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1984-06 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.6, pp.797 - 800 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60720 | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.title | A Two-Dimensional Model for the Excess Interstitial Distribution in Silicon During Thermal Oxidation | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1984SS50400010 | - |
| dc.identifier.scopusid | 2-s2.0-0021437279 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 31 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 797 | - |
| dc.citation.endingpage | 800 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.contributor.nonIdAuthor | Y.S.Shin | - |
| dc.type.journalArticle | Article | - |
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