Increase of Doping Efficiency by Light Soaking in Boron-doped Hydrogenated Amorphous silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.Jang | ko |
| dc.contributor.author | S.C. Park | ko |
| dc.contributor.author | S.C. Kim | ko |
| dc.contributor.author | C. Lee | ko |
| dc.date.accessioned | 2013-02-25T07:56:51Z | - |
| dc.date.available | 2013-02-25T07:56:51Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1987 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.51, no.22, pp.1804 - 1806 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60657 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Increase of Doping Efficiency by Light Soaking in Boron-doped Hydrogenated Amorphous silicon | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1987K957200014 | - |
| dc.identifier.scopusid | 2-s2.0-0001075171 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 51 | - |
| dc.citation.issue | 22 | - |
| dc.citation.beginningpage | 1804 | - |
| dc.citation.endingpage | 1806 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.98528 | - |
| dc.contributor.nonIdAuthor | J.Jang | - |
| dc.contributor.nonIdAuthor | S.C. Park | - |
| dc.contributor.nonIdAuthor | S.C. Kim | - |
| dc.type.journalArticle | Article | - |
- Appears in Collection
- Files in This Item
- 28306.pdf(685.7 kB)Download
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 25 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.