DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조병진 | ko |
dc.contributor.author | 김정규 | ko |
dc.contributor.author | 김충기 | ko |
dc.date.accessioned | 2013-02-25T07:45:55Z | - |
dc.date.available | 2013-02-25T07:45:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1990-09 | - |
dc.identifier.citation | 전자공학회논문지, v.27, no.9, pp.1409 - 1418 | - |
dc.identifier.issn | 1975-2377 | - |
dc.identifier.uri | http://hdl.handle.net/10203/60590 | - |
dc.language | Korean | - |
dc.publisher | 대한전자공학회 | - |
dc.title | 고속열확산 공정에 의해 형성된 Phosphorus Source/Drain 을 갖는 NMOS 트랜지스터의 특성 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1409 | - |
dc.citation.endingpage | 1418 | - |
dc.citation.publicationname | 전자공학회논문지 | - |
dc.contributor.localauthor | 조병진 | - |
dc.contributor.nonIdAuthor | 김정규 | - |
dc.contributor.nonIdAuthor | 김충기 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.