Influence of Ion Effects on High-Current Relativistic Diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | E.H. Choi | ko |
| dc.contributor.author | Hee.M.Shin | ko |
| dc.contributor.author | Choi, Duk In | ko |
| dc.contributor.author | H.S. Uhm | ko |
| dc.date.accessioned | 2013-02-25T07:26:20Z | - |
| dc.date.available | 2013-02-25T07:26:20Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1987-03 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.61, no.6, pp.2160 - 2165 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60543 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Influence of Ion Effects on High-Current Relativistic Diodes | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1987G327200009 | - |
| dc.identifier.scopusid | 2-s2.0-11744295883 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 61 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 2160 | - |
| dc.citation.endingpage | 2165 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.contributor.nonIdAuthor | E.H. Choi | - |
| dc.contributor.nonIdAuthor | Hee.M.Shin | - |
| dc.contributor.nonIdAuthor | H.S. Uhm | - |
| dc.type.journalArticle | Article | - |
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