In-situ Etching of GaAsInP for Improved Growth Interface
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | c. caneau | ko |
| dc.contributor.author | Yoo, Hoi-Jun | ko |
| dc.contributor.author | r. bhat | ko |
| dc.contributor.author | m. koza | ko |
| dc.contributor.author | j.r.hayes | ko |
| dc.date.accessioned | 2013-02-25T06:40:46Z | - |
| dc.date.available | 2013-02-25T06:40:46Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.102, pp.491 - 500 | - |
| dc.identifier.issn | 0022-0248 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60467 | - |
| dc.language | English | - |
| dc.publisher | Elsevier Science Bv | - |
| dc.title | In-situ Etching of GaAsInP for Improved Growth Interface | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 102 | - |
| dc.citation.beginningpage | 491 | - |
| dc.citation.endingpage | 500 | - |
| dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
| dc.contributor.localauthor | Yoo, Hoi-Jun | - |
| dc.contributor.nonIdAuthor | c. caneau | - |
| dc.contributor.nonIdAuthor | r. bhat | - |
| dc.contributor.nonIdAuthor | m. koza | - |
| dc.contributor.nonIdAuthor | j.r.hayes | - |
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