DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김건호 | ko |
dc.contributor.author | 김인호 | ko |
dc.contributor.author | 이정주 | ko |
dc.contributor.author | 서동주 | ko |
dc.contributor.author | 최치규 | ko |
dc.contributor.author | 홍성락 | ko |
dc.contributor.author | 양수정 | ko |
dc.contributor.author | 박형호 | ko |
dc.contributor.author | 이중환 | ko |
dc.contributor.author | 백문철 | ko |
dc.contributor.author | 권오준 | ko |
dc.contributor.author | 박동수 | ko |
dc.contributor.author | 이정용 | ko |
dc.date.accessioned | 2013-02-25T04:39:33Z | - |
dc.date.available | 2013-02-25T04:39:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1992 | - |
dc.identifier.citation | 한국진공학회지, v.1, no.1, pp.67 - 72 | - |
dc.identifier.issn | 1225-8822 | - |
dc.identifier.uri | http://hdl.handle.net/10203/59927 | - |
dc.language | Korean | - |
dc.publisher | 한국진공학회 | - |
dc.title | Growth of Ti on Si(111)-7 7 Surface and the Formation of Epitaxial C54 TiSi2 on Si(111) Substrate | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 1 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 67 | - |
dc.citation.endingpage | 72 | - |
dc.citation.publicationname | 한국진공학회지 | - |
dc.contributor.localauthor | 이정용 | - |
dc.contributor.nonIdAuthor | 김건호 | - |
dc.contributor.nonIdAuthor | 김인호 | - |
dc.contributor.nonIdAuthor | 이정주 | - |
dc.contributor.nonIdAuthor | 서동주 | - |
dc.contributor.nonIdAuthor | 최치규 | - |
dc.contributor.nonIdAuthor | 홍성락 | - |
dc.contributor.nonIdAuthor | 양수정 | - |
dc.contributor.nonIdAuthor | 박형호 | - |
dc.contributor.nonIdAuthor | 이중환 | - |
dc.contributor.nonIdAuthor | 백문철 | - |
dc.contributor.nonIdAuthor | 권오준 | - |
dc.contributor.nonIdAuthor | 박동수 | - |
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