Two-Dimensional Simulation of MOS Transistors Using Numerical Method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | T.S.Jung | ko |
| dc.contributor.author | C.M.Kyung | ko |
| dc.date.accessioned | 2013-02-25T03:07:57Z | - |
| dc.date.available | 2013-02-25T03:07:57Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1985-09 | - |
| dc.identifier.citation | 전기학회지, v.22, no.5, pp.512 - 520 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/59351 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | Two-Dimensional Simulation of MOS Transistors Using Numerical Method | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 22 | - |
| dc.citation.issue | 5 | - |
| dc.citation.beginningpage | 512 | - |
| dc.citation.endingpage | 520 | - |
| dc.citation.publicationname | 전기학회지 | - |
| dc.contributor.localauthor | C.M.Kyung | - |
| dc.contributor.nonIdAuthor | T.S.Jung | - |
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