A NOVEL ELECTRON-BEAM EXPOSURE EPITAXY FOR GROWING GAAS FILMS ON FLUORIDE SI STRUCTURES
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.contributor.author | ISHIWARA, H | ko |
| dc.contributor.author | KANEMARU, S | ko |
| dc.contributor.author | FURUKAWA, S | ko |
| dc.date.accessioned | 2013-02-25T02:03:28Z | - |
| dc.date.available | 2013-02-25T02:03:28Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1987-11 | - |
| dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.26, no.11, pp.1834 - 1836 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58982 | - |
| dc.language | English | - |
| dc.publisher | JAPAN J APPLIED PHYSICS | - |
| dc.title | A NOVEL ELECTRON-BEAM EXPOSURE EPITAXY FOR GROWING GAAS FILMS ON FLUORIDE SI STRUCTURES | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1987L022100025 | - |
| dc.identifier.scopusid | 2-s2.0-0023456662 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.issue | 11 | - |
| dc.citation.beginningpage | 1834 | - |
| dc.citation.endingpage | 1836 | - |
| dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | ISHIWARA, H | - |
| dc.contributor.nonIdAuthor | KANEMARU, S | - |
| dc.contributor.nonIdAuthor | FURUKAWA, S | - |
| dc.type.journalArticle | Article | - |
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