Transconductance Compression near Subthreshold Region of GaAs Floated Electron Channel Field Effect Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, YJ | ko |
| dc.contributor.author | Kim, CT | ko |
| dc.contributor.author | Hong, Songcheol | ko |
| dc.contributor.author | Kwon, Young Se | ko |
| dc.date.accessioned | 2013-02-25T01:33:31Z | - |
| dc.date.available | 2013-02-25T01:33:31Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | SOLID-STATE ELECTRONICS, v.37, pp.207 - 210 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58813 | - |
| dc.language | English | - |
| dc.publisher | Pergamon Press Ltd. | - |
| dc.title | Transconductance Compression near Subthreshold Region of GaAs Floated Electron Channel Field Effect Transistor | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-0028259326 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 37 | - |
| dc.citation.beginningpage | 207 | - |
| dc.citation.endingpage | 210 | - |
| dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
| dc.contributor.nonIdAuthor | Lee, YJ | - |
| dc.contributor.nonIdAuthor | Kim, CT | - |
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