Thermal Equilibrium Changes in Diode Structures of Dioped amorphous Silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.Jang | ko |
| dc.contributor.author | Y.K.Lee | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-25T00:17:39Z | - |
| dc.date.available | 2013-02-25T00:17:39Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.54, no.3, pp.250 - 252 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58337 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Thermal Equilibrium Changes in Diode Structures of Dioped amorphous Silicon | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1989R737900021 | - |
| dc.identifier.scopusid | 2-s2.0-36549091811 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 54 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 250 | - |
| dc.citation.endingpage | 252 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.100980 | - |
| dc.contributor.nonIdAuthor | J.Jang | - |
| dc.contributor.nonIdAuthor | Y.K.Lee | - |
| dc.type.journalArticle | Article | - |
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