DC Field | Value | Language |
---|---|---|
dc.contributor.author | 배병성 | ko |
dc.contributor.author | 허준 | ko |
dc.contributor.author | 최광수 | ko |
dc.contributor.author | 이주천 | ko |
dc.date.accessioned | 2013-02-24T14:52:07Z | - |
dc.date.available | 2013-02-24T14:52:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1988-02 | - |
dc.identifier.citation | 새물리, v.28, no.1, pp.185 - 191 | - |
dc.identifier.issn | 0374-4914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/58015 | - |
dc.language | Korean | - |
dc.publisher | 한국물리학회 | - |
dc.title | 비정질 실리콘 전계효과 트랜지스터에서 안정성에 관한 연구 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 185 | - |
dc.citation.endingpage | 191 | - |
dc.citation.publicationname | 새물리 | - |
dc.contributor.nonIdAuthor | 배병성 | - |
dc.contributor.nonIdAuthor | 허준 | - |
dc.contributor.nonIdAuthor | 최광수 | - |
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