Thermally Induced Metastability in Amorphous silicon Thin Film Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Y.S. Lee | ko |
| dc.contributor.author | H.Y. Chu | ko |
| dc.contributor.author | J.Jang | ko |
| dc.contributor.author | B.S.Bai | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-24T14:48:05Z | - |
| dc.date.available | 2013-02-24T14:48:05Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988-12 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.53, no.26, pp.2617 - 2619 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57989 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Thermally Induced Metastability in Amorphous silicon Thin Film Transistors | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1988R914500014 | - |
| dc.identifier.scopusid | 2-s2.0-36549100461 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 53 | - |
| dc.citation.issue | 26 | - |
| dc.citation.beginningpage | 2617 | - |
| dc.citation.endingpage | 2619 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.100176 | - |
| dc.contributor.nonIdAuthor | Y.S. Lee | - |
| dc.contributor.nonIdAuthor | H.Y. Chu | - |
| dc.contributor.nonIdAuthor | J.Jang | - |
| dc.contributor.nonIdAuthor | B.S.Bai | - |
| dc.type.journalArticle | Article | - |
- Appears in Collection
- Files in This Item
- 15693.pdf(642.71 kB)Download
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 1 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.