Oxygen and Nitrogen Impurity Effects on Electrical and Optical Properties of a-Si:H
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H.K. Lee | ko |
| dc.contributor.author | 이주천 | ko |
| dc.date.accessioned | 2013-02-24T14:47:00Z | - |
| dc.date.available | 2013-02-24T14:47:00Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1984 | - |
| dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.17, no.3, pp.234 - 241 | - |
| dc.identifier.issn | 3744-4884 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57981 | - |
| dc.language | English | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Oxygen and Nitrogen Impurity Effects on Electrical and Optical Properties of a-Si:H | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 17 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 234 | - |
| dc.citation.endingpage | 241 | - |
| dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.contributor.nonIdAuthor | H.K. Lee | - |
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