Thermal Equilibrium Temperature in Doped Hydrogenated Amorphous silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J-H Lee | ko |
| dc.contributor.author | J.Jang | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-24T14:32:36Z | - |
| dc.date.available | 2013-02-24T14:32:36Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988 | - |
| dc.identifier.citation | SOLID STATE COMMUNICATIONS, v.68, no.7, pp.615 - 617 | - |
| dc.identifier.issn | 0038-1098 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57886 | - |
| dc.language | English | - |
| dc.publisher | Pergamon-Elsevier Science Ltd | - |
| dc.title | Thermal Equilibrium Temperature in Doped Hydrogenated Amorphous silicon | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1988Q916300005 | - |
| dc.identifier.scopusid | 2-s2.0-2842614419 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 68 | - |
| dc.citation.issue | 7 | - |
| dc.citation.beginningpage | 615 | - |
| dc.citation.endingpage | 617 | - |
| dc.citation.publicationname | SOLID STATE COMMUNICATIONS | - |
| dc.contributor.nonIdAuthor | J-H Lee | - |
| dc.contributor.nonIdAuthor | J.Jang | - |
| dc.type.journalArticle | Article | - |
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