THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODES
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Kwyro | ko |
| dc.contributor.author | NUSSBAUM, A | ko |
| dc.date.accessioned | 2013-02-24T13:52:45Z | - |
| dc.date.available | 2013-02-24T13:52:45Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1980 | - |
| dc.identifier.citation | SOLID-STATE ELECTRONICS, v.23, no.6, pp.655 - 660 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57605 | - |
| dc.language | English | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.title | THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODES | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1980JZ72300019 | - |
| dc.identifier.scopusid | 2-s2.0-0019026445 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 23 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 655 | - |
| dc.citation.endingpage | 660 | - |
| dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
| dc.identifier.doi | 10.1016/0038-1101(80)90051-9 | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | NUSSBAUM, A | - |
| dc.type.journalArticle | Article | - |
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