Effect of argon dilution of silane on persistent photoconductivity in single-layered hydrogenated amorphous silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | S-H Choi | ko |
| dc.contributor.author | G-L Park | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-24T13:52:12Z | - |
| dc.date.available | 2013-02-24T13:52:12Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1987 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.61, no.1, pp.446 - 448 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57601 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Effect of argon dilution of silane on persistent photoconductivity in single-layered hydrogenated amorphous silicon | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1987F377400073 | - |
| dc.identifier.scopusid | 2-s2.0-36549090867 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 61 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 446 | - |
| dc.citation.endingpage | 448 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.contributor.nonIdAuthor | S-H Choi | - |
| dc.contributor.nonIdAuthor | G-L Park | - |
| dc.type.journalArticle | Note | - |
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