DC Field | Value | Language |
---|---|---|
dc.contributor.author | JEWELL, JL | ko |
dc.contributor.author | HARBISON, JP | ko |
dc.contributor.author | SCHERER, A | ko |
dc.contributor.author | Lee, Yong-Hee | ko |
dc.contributor.author | FLOREZ, LT | ko |
dc.date.accessioned | 2013-02-24T13:31:49Z | - |
dc.date.available | 2013-02-24T13:31:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-06 | - |
dc.identifier.citation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v.27, no.6, pp.1332 - 1346 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57488 | - |
dc.description.abstract | We have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5-mu-m to > 50-mu-m. The approaches we have taken have produced (not necessarily by us) the smallest, the lowest threshold, the highest quantum efficiency, and the highest modulation speed VCSEL's to date. The four principal sections of this paper-design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics - are written by people who are closely involved in their development. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | QUANTUM-WELL LASERS | - |
dc.subject | GAALAS SEMICONDUCTOR-LASERS | - |
dc.subject | MU-M | - |
dc.subject | LASING CHARACTERISTICS | - |
dc.subject | INJECTION-LASERS | - |
dc.subject | HIGH-EFFICIENCY | - |
dc.subject | ULTIMATE LIMIT | - |
dc.subject | GAAS-SURFACES | - |
dc.subject | DIODE-LASERS | - |
dc.subject | MICROLASERS | - |
dc.title | VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION | - |
dc.type | Article | - |
dc.identifier.wosid | A1991GA57300012 | - |
dc.identifier.scopusid | 2-s2.0-0026172831 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1332 | - |
dc.citation.endingpage | 1346 | - |
dc.citation.publicationname | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.identifier.doi | 10.1109/3.89950 | - |
dc.contributor.localauthor | Lee, Yong-Hee | - |
dc.contributor.nonIdAuthor | JEWELL, JL | - |
dc.contributor.nonIdAuthor | HARBISON, JP | - |
dc.contributor.nonIdAuthor | SCHERER, A | - |
dc.contributor.nonIdAuthor | FLOREZ, LT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | QUANTUM-WELL LASERS | - |
dc.subject.keywordPlus | GAALAS SEMICONDUCTOR-LASERS | - |
dc.subject.keywordPlus | MU-M | - |
dc.subject.keywordPlus | LASING CHARACTERISTICS | - |
dc.subject.keywordPlus | INJECTION-LASERS | - |
dc.subject.keywordPlus | HIGH-EFFICIENCY | - |
dc.subject.keywordPlus | ULTIMATE LIMIT | - |
dc.subject.keywordPlus | GAAS-SURFACES | - |
dc.subject.keywordPlus | DIODE-LASERS | - |
dc.subject.keywordPlus | MICROLASERS | - |
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