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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION

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dc.contributor.authorJEWELL, JLko
dc.contributor.authorHARBISON, JPko
dc.contributor.authorSCHERER, Ako
dc.contributor.authorLee, Yong-Heeko
dc.contributor.authorFLOREZ, LTko
dc.date.accessioned2013-02-24T13:31:49Z-
dc.date.available2013-02-24T13:31:49Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-06-
dc.identifier.citationIEEE JOURNAL OF QUANTUM ELECTRONICS, v.27, no.6, pp.1332 - 1346-
dc.identifier.issn0018-9197-
dc.identifier.urihttp://hdl.handle.net/10203/57488-
dc.description.abstractWe have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5-mu-m to > 50-mu-m. The approaches we have taken have produced (not necessarily by us) the smallest, the lowest threshold, the highest quantum efficiency, and the highest modulation speed VCSEL's to date. The four principal sections of this paper-design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics - are written by people who are closely involved in their development.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectQUANTUM-WELL LASERS-
dc.subjectGAALAS SEMICONDUCTOR-LASERS-
dc.subjectMU-M-
dc.subjectLASING CHARACTERISTICS-
dc.subjectINJECTION-LASERS-
dc.subjectHIGH-EFFICIENCY-
dc.subjectULTIMATE LIMIT-
dc.subjectGAAS-SURFACES-
dc.subjectDIODE-LASERS-
dc.subjectMICROLASERS-
dc.titleVERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION-
dc.typeArticle-
dc.identifier.wosidA1991GA57300012-
dc.identifier.scopusid2-s2.0-0026172831-
dc.type.rimsART-
dc.citation.volume27-
dc.citation.issue6-
dc.citation.beginningpage1332-
dc.citation.endingpage1346-
dc.citation.publicationnameIEEE JOURNAL OF QUANTUM ELECTRONICS-
dc.identifier.doi10.1109/3.89950-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorJEWELL, JL-
dc.contributor.nonIdAuthorHARBISON, JP-
dc.contributor.nonIdAuthorSCHERER, A-
dc.contributor.nonIdAuthorFLOREZ, LT-
dc.type.journalArticleArticle-
dc.subject.keywordPlusQUANTUM-WELL LASERS-
dc.subject.keywordPlusGAALAS SEMICONDUCTOR-LASERS-
dc.subject.keywordPlusMU-M-
dc.subject.keywordPlusLASING CHARACTERISTICS-
dc.subject.keywordPlusINJECTION-LASERS-
dc.subject.keywordPlusHIGH-EFFICIENCY-
dc.subject.keywordPlusULTIMATE LIMIT-
dc.subject.keywordPlusGAAS-SURFACES-
dc.subject.keywordPlusDIODE-LASERS-
dc.subject.keywordPlusMICROLASERS-
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