비소화 갈륨의 선택적 액상 에피층 성장 ;성장기구 및 형태Selective Liquid Phase Epitaxy of GaAs ; Kinetics and Morphology
- Publisher
- 대한전자공학회
- Issue Date
- 1986-11
- Language
- Korean
- Citation
전자공학회지, v.23, no.6, pp.820 - 832
- ISSN
- 1975-2377
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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