OPTIMIZATION OF THE GROWTH-CONDITIONS OF HETEROEPITAXIAL GAAS FILMS ON CAF2/SI STRUCTURES
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.contributor.author | ASANO, T | ko |
| dc.contributor.author | ISHIWARA, H | ko |
| dc.contributor.author | FURUKAWA, S | ko |
| dc.date.accessioned | 2013-02-24T12:40:54Z | - |
| dc.date.available | 2013-02-24T12:40:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1986-07 | - |
| dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.7, pp.595 - 597 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/57208 | - |
| dc.language | English | - |
| dc.publisher | JAPAN J APPLIED PHYSICS | - |
| dc.title | OPTIMIZATION OF THE GROWTH-CONDITIONS OF HETEROEPITAXIAL GAAS FILMS ON CAF2/SI STRUCTURES | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1986D537500024 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 25 | - |
| dc.citation.issue | 7 | - |
| dc.citation.beginningpage | 595 | - |
| dc.citation.endingpage | 597 | - |
| dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
| dc.identifier.doi | 10.1143/JJAP.25.L595 | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | ASANO, T | - |
| dc.contributor.nonIdAuthor | ISHIWARA, H | - |
| dc.contributor.nonIdAuthor | FURUKAWA, S | - |
| dc.type.journalArticle | Article | - |
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