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FinFET Process Refinements for Improved Mobility and Gate Work Function Engineering

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorChang, Leland-
dc.contributor.authorRanade, Pushkar-
dc.contributor.authorLee, Jeong-Soo-
dc.contributor.authorHa, Daewon-
dc.contributor.authorBalasubramanian, Sriram-
dc.contributor.authorAgarwal, Aditya-
dc.contributor.authorAmeen, Mike-
dc.contributor.authorKing, Tsu-Jae-
dc.contributor.authorBokor, Jeffrey-
dc.date.accessioned2007-06-20T07:15:00Z-
dc.date.available2007-06-20T07:15:00Z-
dc.date.created2012-02-06-
dc.date.issued2002-12-
dc.identifier.citationIEEE IEDM Technical Digest, v., no., pp.259 - 262-
dc.identifier.urihttp://hdl.handle.net/10203/570-
dc.description.sponsorshipThis research is supported under MARCO contract 2001-MT-887 and SRC contact 2000-NJ-850. Devices were fabricated in the UC Berkeley Microfabrication Laboratoryen
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleFinFET Process Refinements for Improved Mobility and Gate Work Function Engineering-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage259-
dc.citation.endingpage262-
dc.citation.publicationnameIEEE IEDM Technical Digest-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorChang, Leland-
dc.contributor.nonIdAuthorRanade, Pushkar-
dc.contributor.nonIdAuthorLee, Jeong-Soo-
dc.contributor.nonIdAuthorHa, Daewon-
dc.contributor.nonIdAuthorBalasubramanian, Sriram-
dc.contributor.nonIdAuthorAgarwal, Aditya-
dc.contributor.nonIdAuthorAmeen, Mike-
dc.contributor.nonIdAuthorKing, Tsu-Jae-
dc.contributor.nonIdAuthorBokor, Jeffrey-
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