Reduction of Direct- Tunneling Gate Leakage Current in Double-Gate and Ultra-Thin Body MOSFETs

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorChang, Leland-
dc.contributor.authorYang, Kevin J.-
dc.contributor.authorYeo, Tee-Chia-
dc.contributor.authorKing, Tsu-Jae-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2007-06-20T06:43:59Z-
dc.date.available2007-06-20T06:43:59Z-
dc.date.created2012-02-06-
dc.date.issued2001-12-
dc.identifier.citationIEEE, v., no., pp.99 - 102-
dc.identifier.urihttp://hdl.handle.net/10203/564-
dc.description.sponsorshipThis research is supported under MARCO contract 2001-MT-887en
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleReduction of Direct- Tunneling Gate Leakage Current in Double-Gate and Ultra-Thin Body MOSFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage99-
dc.citation.endingpage102-
dc.citation.publicationnameIEEE-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorChang, Leland-
dc.contributor.nonIdAuthorYang, Kevin J.-
dc.contributor.nonIdAuthorYeo, Tee-Chia-
dc.contributor.nonIdAuthorKing, Tsu-Jae-
dc.contributor.nonIdAuthorHu, Chenming-

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