CCl4를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성Fabrication and Characteristics of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride ( CCl4 )
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 손정환 | ko |
| dc.contributor.author | 김동욱 | ko |
| dc.contributor.author | 홍성철 | ko |
| dc.contributor.author | 권영세 | ko |
| dc.date.accessioned | 2013-02-24T10:32:43Z | - |
| dc.date.available | 2013-02-24T10:32:43Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1993-12 | - |
| dc.identifier.citation | 전자공학회논문지, v.30, no.12, pp.1031 - 1039 | - |
| dc.identifier.issn | 1975-2377 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/56476 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | CCl4를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성 | - |
| dc.title.alternative | Fabrication and Characteristics of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride ( CCl4 ) | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 30 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 1031 | - |
| dc.citation.endingpage | 1039 | - |
| dc.citation.publicationname | 전자공학회논문지 | - |
| dc.contributor.localauthor | 홍성철 | - |
| dc.contributor.localauthor | 권영세 | - |
| dc.contributor.nonIdAuthor | 손정환 | - |
| dc.contributor.nonIdAuthor | 김동욱 | - |
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