NOISE IN A-SI-H P-I-N DETECTOR DIODES

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Noise of a-Si:H p-i-n diodes (5 approximately 50 mum thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise these seems to be a shaping time independent noise component at zero biased diodes.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1992-08
Language
English
Article Type
Article; Proceedings Paper
Keywords

AMORPHOUS-SILICON

Citation

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.39, no.4, pp.641 - 644

ISSN
0018-9499
DOI
10.1109/23.159679
URI
http://hdl.handle.net/10203/56237
Appears in Collection
NE-Journal Papers(저널논문)
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