A STEADY-STATE TEMPERATURE MODEL FOR SILICON RECRYSTALLIZATION USING LIGHT-SOURCES

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Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1986-06
Language
English
Article Type
Note
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.33, no.6, pp.864 - 865

ISSN
0018-9383
URI
http://hdl.handle.net/10203/55954
Appears in Collection
EE-Journal Papers(저널논문)
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