3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES

Abstract

High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3V have been developed. The MESFETs with 0.6mum gate length and 12mm gate width show a maximum drain current density of 310mA/mm and a uniform transconductance of around 112mS, ranging from V(gs) = -1.8V to 0.5V. The device tested at 3.3V drain bias and 900MHz demonstrates an output power of 30.9dBm with associate power-added-efficiency of 65% for an input power of 20dBm.