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NEGATIVE DIFFERENTIAL RESISTANCE OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL STRUCTURES UNDER HIGH-POWER PHOTOEXCITATION - STRUCTURE OPTIMIZATION FOR AN OSCILLATOR

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dc.contributor.authorGOSWAMI, Sko
dc.contributor.authorDAVIS, Lko
dc.contributor.authorHong, Songcheolko
dc.contributor.authorSINGH, Jko
dc.contributor.authorBHATTACHARYA, PKko
dc.contributor.authorHADDAD, GIko
dc.date.accessioned2013-02-24T08:50:27Z-
dc.date.available2013-02-24T08:50:27Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1992-05-
dc.identifier.citationELECTRONICS LETTERS, v.28, no.10, pp.915 - 916-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/55849-
dc.description.abstractA study is presented of the photocurrent behaviour of pin diodes having GaAs/AlxGa1-xAs MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.1 < x < 0.2. The performance characteristics of optically controlled oscillators are estimated for a diode with MQW having Al0.15Ga0.85As barriers.-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.subjectQUANTUM-
dc.subjectMODULATION-
dc.subjectDEVICE-
dc.titleNEGATIVE DIFFERENTIAL RESISTANCE OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL STRUCTURES UNDER HIGH-POWER PHOTOEXCITATION - STRUCTURE OPTIMIZATION FOR AN OSCILLATOR-
dc.typeArticle-
dc.identifier.wosidA1992HU15600012-
dc.identifier.scopusid2-s2.0-0027114189-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue10-
dc.citation.beginningpage915-
dc.citation.endingpage916-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:19920580-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorGOSWAMI, S-
dc.contributor.nonIdAuthorDAVIS, L-
dc.contributor.nonIdAuthorSINGH, J-
dc.contributor.nonIdAuthorBHATTACHARYA, PK-
dc.contributor.nonIdAuthorHADDAD, GI-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorNEGATIVE RESISTANCE-
dc.subject.keywordAuthorDIODES-
dc.subject.keywordAuthorPHOTOCONDUCTIVITY-
dc.subject.keywordAuthorSEMICONDUCTOR DEVICES AND MATERIALS-
dc.subject.keywordPlusQUANTUM-
dc.subject.keywordPlusMODULATION-
dc.subject.keywordPlusDEVICE-
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EE-Journal Papers(저널논문)
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