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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition

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dc.contributor.authorMheen, Bongki-
dc.contributor.authorPark, Chan-Woo-
dc.contributor.authorKim, Sang-Hoon-
dc.contributor.authorKang, Jin-Yeong-
dc.contributor.authorHong, Songcheol-
dc.date.accessioned2008-07-01T05:54:34Z-
dc.date.available2008-07-01T05:54:34Z-
dc.date.created2012-02-06-
dc.date.issued2003-10-
dc.identifier.citationEuropean Gallium Arsenide and other Compound Semiconductors Application Symposium, v., no., pp.6 - 10-
dc.identifier.urihttp://hdl.handle.net/10203/5334-
dc.languageENG-
dc.language.isoen_USen
dc.publisherEuropean Gallium Arsenide and other Compound Semiconductors Application Symposium-
dc.titleLow noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage6-
dc.citation.endingpage10-
dc.citation.publicationnameEuropean Gallium Arsenide and other Compound Semiconductors Application Symposium-
dc.identifier.conferencecountryGermany-
dc.identifier.conferencecountryGermany-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorMheen, Bongki-
dc.contributor.nonIdAuthorPark, Chan-Woo-
dc.contributor.nonIdAuthorKim, Sang-Hoon-
dc.contributor.nonIdAuthorKang, Jin-Yeong-
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EE-Conference Papers(학술회의논문)

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