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Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06 |
DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT Kim, Kwan‐Shik; Cho, Yong-Hoon; Choe, Byung‐Doo; Jeong, Weon Guk; H. Lim, APPLIED PHYSICS LETTERS, v.67, no.12, pp.1718 - 1720, 1995-09 |
DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS Cho, Yong-Hoon; KIM, KS; RYU, SW; KIM, SK; CHOE, BD; LIM, H, APPLIED PHYSICS LETTERS, v.66, no.14, pp.1785 - 1787, 1995-04 |
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