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Effect of atomic hydrogen on the growth of Ge/Si(100) Kahng, SJ; Park, JY; Booh, KH; Lee, Jhinhwan; Khang, Y; Kuk, Y, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.3, pp.927 - 929, 1997 |
First-principles study of the As-mediated growths of Si and Ge on Si(100) Ko, YJ; Chang, Kee-Joo; Yi, JY; Park, SJ; Lee, EH, SURFACE REVIEW AND LETTERS, v.5, no.1, pp.77 - 80, 1998-02 |
Ge adatom adsorption, diffusion, and exchange on surfactant-covered Si(111) surfaces Ko, YJ; Chang, Kee-Joo; Yi, JY, PHYSICAL REVIEW B, v.60, no.3, pp.1777 - 1782, 1999-07 |
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