플라즈마 화학증착된 Aluminum oxide 박막의 $CF_4$와 $CC1_4$ 플라즈마에서의 Reactive ion etching 특성 = The $CF_4/CC1_4$ reactive ion etching properties of aluminum oxide films deposited by PECVD

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dc.contributor.advisor천성순-
dc.contributor.advisorChun, Soung-Soon-
dc.contributor.author김형석-
dc.contributor.authorKim, Hyung-Suk-
dc.date.accessioned2011-12-15T01:40:14Z-
dc.date.available2011-12-15T01:40:14Z-
dc.date.issued1993-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68554&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/51228-
dc.description학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ iii, 83 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title플라즈마 화학증착된 Aluminum oxide 박막의 $CF_4$와 $CC1_4$ 플라즈마에서의 Reactive ion etching 특성 = The $CF_4/CC1_4$ reactive ion etching properties of aluminum oxide films deposited by PECVD-
dc.typeThesis(Master)-
dc.identifier.CNRN68554/325007-
dc.description.department한국과학기술원 : 전자재료공학과, -
dc.identifier.uid000911182-
dc.contributor.localauthor김형석-
dc.contributor.localauthorKim, Hyung-Suk-
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MS-Theses_Master(석사논문)
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