플라즈마 화학증착된 Aluminum oxide 박막의 $CF_4$와 $CC1_4$ 플라즈마에서의 Reactive ion etching 특성 = The $CF_4/CC1_4$ reactive ion etching properties of aluminum oxide films deposited by PECVD

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Advisors
천성순researcherChun, Soung-Soonresearcher
Description
한국과학기술원 : 전자재료공학과,
Publisher
한국과학기술원
Issue Date
1993
Identifier
68554/325007 / 000911182
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ iii, 83 p. ]

URI
http://hdl.handle.net/10203/51228
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68554&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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