열처리 조건이 ECR plasma 화학 증착법으로 증착된 tantalum oxide 박막의 물성에 미치는 영향The effects of annealing conditions on the properties of tantalum oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

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dc.contributor.advisor천성순-
dc.contributor.advisorChun, Soung-Soon-
dc.contributor.author권오승-
dc.contributor.authorKwon, Oh-Seung-
dc.date.accessioned2011-12-15T01:40:13Z-
dc.date.available2011-12-15T01:40:13Z-
dc.date.issued1993-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68553&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/51227-
dc.description학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ iv, 59 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title열처리 조건이 ECR plasma 화학 증착법으로 증착된 tantalum oxide 박막의 물성에 미치는 영향-
dc.title.alternativeThe effects of annealing conditions on the properties of tantalum oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition-
dc.typeThesis(Master)-
dc.identifier.CNRN68553/325007-
dc.description.department한국과학기술원 : 전자재료공학과, -
dc.identifier.uid000911039-
dc.contributor.localauthor권오승-
dc.contributor.localauthorKwon, Oh-Seung-
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MS-Theses_Master(석사논문)
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