열처리 조건이 ECR plasma 화학 증착법으로 증착된 tantalum oxide 박막의 물성에 미치는 영향 = The effects of annealing conditions on the properties of tantalum oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

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dc.contributor.advisor천성순-
dc.contributor.advisorChun, Soung-Soon-
dc.contributor.author권오승-
dc.contributor.authorKwon, Oh-Seung-
dc.date.accessioned2011-12-15T01:40:13Z-
dc.date.available2011-12-15T01:40:13Z-
dc.date.issued1993-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68553&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/51227-
dc.description학위논문(석사) - 한국과학기술원 : 전자재료공학과, 1993.2, [ iv, 59 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title열처리 조건이 ECR plasma 화학 증착법으로 증착된 tantalum oxide 박막의 물성에 미치는 영향 = The effects of annealing conditions on the properties of tantalum oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition-
dc.typeThesis(Master)-
dc.identifier.CNRN68553/325007-
dc.description.department한국과학기술원 : 전자재료공학과, -
dc.identifier.uid000911039-
dc.contributor.localauthor권오승-
dc.contributor.localauthorKwon, Oh-Seung-
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MS-Theses_Master(석사논문)
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