고집적 FRAM 메모리에서 Ir과 Ru의 확산방지막으로서의 특성평가Characteristics of Ir and Ru as diffusion barrier for highly integrated memory devices

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dc.contributor.advisor김호기-
dc.contributor.advisorKim, Ho-Gi-
dc.contributor.author한귀영-
dc.contributor.authorHan, Kwi-Young-
dc.date.accessioned2011-12-15T01:33:22Z-
dc.date.available2011-12-15T01:33:22Z-
dc.date.issued2000-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=162666&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/50804-
dc.description학위논문(석사) - 한국과학기술원 : 재료공학과, 2000.8, [ iv, 76 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title고집적 FRAM 메모리에서 Ir과 Ru의 확산방지막으로서의 특성평가-
dc.title.alternativeCharacteristics of Ir and Ru as diffusion barrier for highly integrated memory devices-
dc.typeThesis(Master)-
dc.identifier.CNRN162666/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000983836-
dc.contributor.localauthor김호기-
dc.contributor.localauthorKim, Ho-Gi-
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MS-Theses_Master(석사논문)
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