Inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) 법으로 증착한 비정질 질화규소 박막의 특성Characterization of amorphous silicon nitride thin film deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD)

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dc.contributor.advisor배병수-
dc.contributor.advisorBae, Byeong-Soo-
dc.contributor.author한상수-
dc.contributor.authorHan, Sang-Soo-
dc.date.accessioned2011-12-15T01:30:48Z-
dc.date.available2011-12-15T01:30:48Z-
dc.date.issued1997-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=113163&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/50649-
dc.description학위논문(석사) - 한국과학기술원 : 재료공학과, 1997.2, [ v, 98 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject광학적 대간격-
dc.subject수소량-
dc.subject굴절율-
dc.subject유도플라즈마화학증착법-
dc.subjectUrbach 에너지-
dc.subjectUrbach energy-
dc.subjectOptical band gap-
dc.subjectHydrogen content-
dc.subjectRefractive index-
dc.subjectICP-CVD-
dc.titleInductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) 법으로 증착한 비정질 질화규소 박막의 특성-
dc.title.alternativeCharacterization of amorphous silicon nitride thin film deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD)-
dc.typeThesis(Master)-
dc.identifier.CNRN113163/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000953642-
dc.contributor.localauthor배병수-
dc.contributor.localauthorBae, Byeong-Soo-
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MS-Theses_Master(석사논문)
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