CMP의 기계적 공정 변수가 반도체 표면 평탄화의 균일도에 미치는 영향A effect of the mechanical factors on the uniformity in the chemical-mechanical polishing(CMP) of $SiO_2$ thin film

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dc.contributor.advisor강상원-
dc.contributor.advisorKang, Sang-Won-
dc.contributor.author김우찬-
dc.contributor.authorKim, Woo-Chan-
dc.date.accessioned2011-12-15T01:29:29Z-
dc.date.available2011-12-15T01:29:29Z-
dc.date.issued1996-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=106163&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/50570-
dc.description학위논문(석사) - 한국과학기술원 : 재료공학과, 1996.2, [ iv, 62 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject균일도-
dc.subject화학기계적 연마-
dc.subject연마속도-
dc.subjectPolishing rate-
dc.subjectUniformity-
dc.subjectCMP-
dc.titleCMP의 기계적 공정 변수가 반도체 표면 평탄화의 균일도에 미치는 영향-
dc.title.alternativeA effect of the mechanical factors on the uniformity in the chemical-mechanical polishing(CMP) of $SiO_2$ thin film-
dc.typeThesis(Master)-
dc.identifier.CNRN106163/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000943097-
dc.contributor.localauthor강상원-
dc.contributor.localauthorKang, Sang-Won-
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MS-Theses_Master(석사논문)
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