CMP의 기계적 공정 변수가 반도체 표면 평탄화의 균일도에 미치는 영향 = A effect of the mechanical factors on the uniformity in the chemical-mechanical polishing(CMP) of $SiO_2$ thin film

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Advisors
강상원researcherKang, Sang-Wonresearcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
1996
Identifier
106163/325007 / 000943097
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 재료공학과, 1996.2, [ iv, 62 p. ]

Keywords

균일도; 화학기계적 연마; 연마속도; Polishing rate; Uniformity; CMP

URI
http://hdl.handle.net/10203/50570
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=106163&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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