금속유기화학기상증착법을 이용한 heavily doped Si 기판에서의 $CoSi_2$ layer의 성장거동 및 접합특성에 관한 연구 = Growth behavior of $CoSi_2$ layer on heavily doped Si and junction characteristics using metalorganic chemical vapor deposition

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Advisors
안병태researcherAhn, Byung-Taeresearcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
2002
Identifier
174572/325007 / 000985311
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 재료공학과, 2002.2, [ iv, 150 p. ]

Keywords

에피 성장; 금속유기화학기상증착법; heavily doped Si; 코발트 실리사이드; 누설 전류; leakage current; epitaxial growth; MOCVD; heavily doped Si; cobalt silicide

URI
http://hdl.handle.net/10203/50439
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174572&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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