DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kang, Sang-Won | - |
dc.contributor.advisor | 강상원 | - |
dc.contributor.author | Min, Jae-Sik | - |
dc.contributor.author | 민재식 | - |
dc.date.accessioned | 2011-12-15T01:05:58Z | - |
dc.date.available | 2011-12-15T01:05:58Z | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=155987&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/50360 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 1999.8, [ xi, 110 p. ] | - |
dc.description.abstract | Cu is considered as the most promising alternative to Al-based alloy for the interconnection materials in Si-based intergrated circuits due to its low resistivity and superior resistance to electromigration and stress voiding. However, one of the major drawbacks of Cu is its fast diffusion/drift in Si and most commonly used dielectrics, resulting in deterioration of devices at low temperatures. Hence, a diffusion barrier is necessary between Cu and Si. In this paper, as Cu diffusion barriers, titanium-nitride (Ti-N) and titanium-silicon-nitride (Ti-Si-N) films have been successfully grown by atomic layer deposition (ALD). The film growth kinetics were studied using the concept of ALD and also excellent film characteristics were confirmed. As a preliminary experiment, Ti-N ALD on $SiO_2$ at the substrate temperature of 200℃ has been investigated by alternate supply of reactant sources, $Ti[N(C_2H_5CH_3)_2]_4$ [tetrakis(ethylmethylamino)titanium: TEMAT] and $NH_3$. Ti-N deposition thickness/cycle was s turated at around 1.6 mono-layers per cycle (ML/cycle) with sufficient pulse times of reactant gases at 200℃. The results suggest that Ti-N deposition thickness/cycle could exceed 1 ML/cycle in ALD, and are explained by the re-adsorption mechanism of the reactant gases. An ideal linear relationship between number of cycles and Ti-N film deposition thickness was confirmed. Step coverage was excellent, particles may be caused by the gas phase reactions between TEMAT and $NH_3$ were almost absent because TEMAT was separated from $NH_3$ by the Ar pulse. In spite of relatively low deposition temperature, carbon impurity in ALD Ti-N films was incorporated below 4 at.% compared with above 25 at.% in MOCVD Ti-N films. With the ALD concept from Ti-N ALD using TEMAT and $NH_3$, Ti-Si-N thin films have been grown by ALD using a sequential supply of $Ti[N(CH_3)_2]_4$ [tetrakis(dimethylamido) titanium: TDMAT], ammonia and silane at the substrate temperature of 180℃ and th... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Ti-N | - |
dc.subject | Ti-Si-N | - |
dc.subject | ALD | - |
dc.subject | Adsorption | - |
dc.subject | 확산방지막 | - |
dc.subject | 증착기구 | - |
dc.subject | 흡착 | - |
dc.subject | 원자층증착 | - |
dc.subject | Diffusion barrier | - |
dc.title | (A) study on the atomic layer deposition mechanism and characteristics of Ti-N,Ti-Si-N films deposited by cycleCVD | - |
dc.title.alternative | Cycle-CVD 법으로 증착된 Ti-N, Ti-Si-N 박막의 ALD 증착기구와 특성에 관한 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 155987/325007 | - |
dc.description.department | 한국과학기술원 : 재료공학과, | - |
dc.identifier.uid | 000955126 | - |
dc.contributor.localauthor | Min, Jae-Sik | - |
dc.contributor.localauthor | 민재식 | - |
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