Reactive multi-target sputtering 법으로 증착된 P(L)ZT 박막의 제조 특성및 기억소자로의 응용에 관한 연구Deposition characteristics of P(L)ZT ferroelectric film fabricated by reactive multi-target sputtering method and its applications for memory devices

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Advisors
이원종researcherLee, Won-Jongresearcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
155979/325007 / 000945126
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 재료공학과, 1999.8, [ vi, 162 p. ]

Keywords

이력곡선; 스퍼터링; 페로브스카이트 상; 강유전체; 씨앗층; Fatigue; Seed layer; Multi-target sputter; Perovskite phase; PLZT

URI
http://hdl.handle.net/10203/50358
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=155979&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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