ECR 플라즈마 기상화학증착법으로 제조한 초고집적회로 금속화공정의 확산방지용 TiN 박막의 특성The characteristics of TiN thin films prepared by ECR-PECVD as a diffusion barrier layer in ULSI metallization process
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이원종 | - |
| dc.contributor.advisor | Lee, Won-Jong | - |
| dc.contributor.author | 김종석 | - |
| dc.contributor.author | Kim, Jong-Seok | - |
| dc.date.accessioned | 2011-12-15T01:05:39Z | - |
| dc.date.available | 2011-12-15T01:05:39Z | - |
| dc.date.issued | 1997 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=113002&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/50341 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 1997.2, [ [iv], 112 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | 피복성 | - |
| dc.subject | 확산방지 | - |
| dc.subject | 티타늄질화막 | - |
| dc.subject | 이시알플라즈마 | - |
| dc.subject | ECR | - |
| dc.subject | Step coverage | - |
| dc.subject | Diffusion barrier | - |
| dc.subject | TiN | - |
| dc.subject | PECVD | - |
| dc.title | ECR 플라즈마 기상화학증착법으로 제조한 초고집적회로 금속화공정의 확산방지용 TiN 박막의 특성 | - |
| dc.title.alternative | The characteristics of TiN thin films prepared by ECR-PECVD as a diffusion barrier layer in ULSI metallization process | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 113002/325007 | - |
| dc.description.department | 한국과학기술원 : 재료공학과, | - |
| dc.identifier.uid | 000935085 | - |
| dc.contributor.localauthor | 김종석 | - |
| dc.contributor.localauthor | Kim, Jong-Seok | - |
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