MRAM 용 자기터널접합 내 절연층의 산화조건 및 미세조직변화에 관한 고찰Microstructural variation with the various oxidizing conditions of the oxide layer in magnetic tunnel junction used in MRAM
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 이혁모 | - |
| dc.contributor.advisor | Lee, Hyuck-Mo | - |
| dc.contributor.author | 배준수 | - |
| dc.contributor.author | Bae, Jun-Soo | - |
| dc.date.accessioned | 2011-12-15T01:04:27Z | - |
| dc.date.available | 2011-12-15T01:04:27Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=177281&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/50267 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 2002.8, [ xi, 131 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | 자기터널접합 | - |
| dc.subject | 절연층 | - |
| dc.subject | MRAM | - |
| dc.subject | Magnetic Tunnel Junction | - |
| dc.title | MRAM 용 자기터널접합 내 절연층의 산화조건 및 미세조직변화에 관한 고찰 | - |
| dc.title.alternative | Microstructural variation with the various oxidizing conditions of the oxide layer in magnetic tunnel junction used in MRAM | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 177281/325007 | - |
| dc.description.department | 한국과학기술원 : 재료공학과, | - |
| dc.identifier.uid | 000985168 | - |
| dc.contributor.localauthor | 배준수 | - |
| dc.contributor.localauthor | Bae, Jun-Soo | - |
- Appears in Collection
- MS-Theses_Ph.D.(박사논문)
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