DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 이원종 | - |
dc.contributor.advisor | Lee, Won-Jong | - |
dc.contributor.author | 이희철 | - |
dc.contributor.author | Lee, Hee-Chul | - |
dc.date.accessioned | 2011-12-15T01:04:13Z | - |
dc.date.available | 2011-12-15T01:04:13Z | - |
dc.date.issued | 2002 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174593&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/50253 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 2002.2, [ vi, 171 p. ] | - |
dc.language | kor | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | 비휘발성메모리 | - |
dc.subject | 전극 | - |
dc.subject | 화학기상증착법 | - |
dc.subject | 강유전체 | - |
dc.subject | 박막 | - |
dc.subject | electrode | - |
dc.subject | FRAM | - |
dc.subject | CVD | - |
dc.subject | ferroelectric | - |
dc.subject | PZT | - |
dc.title | FRAM 소자 응용을 위한 ECR PECVD PZT 커패시터 특성에 미치는 전극의 영향 | - |
dc.title.alternative | Effect of electrodes on the characteristics of ECR PECVD PZT capacitors for the application to FRAM devices | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 174593/325007 | - |
dc.description.department | 한국과학기술원 : 재료공학과, | - |
dc.identifier.uid | 000975316 | - |
dc.contributor.localauthor | 이희철 | - |
dc.contributor.localauthor | Lee, Hee-Chul | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.