극자외선 리소그래피 하부 무반사층용 fluorinated silicon nitride 박막의 제조 및 특성분석 = Fabrication and characterization of fluorinated silicon nitride thin film for the bottom antireflective layer in deep ultraviolet lithography

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Advisors
노광수researcherNo, Kwang-Sooresearcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
1998
Identifier
143466/325007 / 000955335
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 재료공학과, 1998.8, [ xv, 158 p. ]

Keywords

ERD-TOF 조성; 무반사층 디자인 시뮬레이터; 플로리네이티드 실리콘 나이트라이드 박막; 하부 무반사층; 극자외선 리소그래피; 산화기구; Oxidation mechanism; ERD-TOF composition; BARL design simulator; Fluorianted silicon nitride thin film; Bottom antireflective layer (BARL); DUV lithography

URI
http://hdl.handle.net/10203/50225
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=143466&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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