이온빔 산화와 열 산화에 의해 형성된 Si(001)-SiO$_2$계면의 구조The structure of the Si(001)-SiO$_2$ interface formed by ion beam oxidation and thermal oxidation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 최시경 | - |
| dc.contributor.advisor | Choi, Si-Kyoung | - |
| dc.contributor.author | 김영필 | - |
| dc.contributor.author | Kim, Young-Pil | - |
| dc.date.accessioned | 2011-12-15T01:03:11Z | - |
| dc.date.available | 2011-12-15T01:03:11Z | - |
| dc.date.issued | 1998 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=133521&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/50192 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 1998.2, [ iv, 109 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | 이온빔 산화와 열 산화에 의해 형성된 Si(001)-SiO$_2$계면의 구조 | - |
| dc.title.alternative | The structure of the Si(001)-SiO$_2$ interface formed by ion beam oxidation and thermal oxidation | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 133521/325007 | - |
| dc.description.department | 한국과학기술원 : 재료공학과, | - |
| dc.identifier.uid | 000925069 | - |
| dc.contributor.localauthor | 김영필 | - |
| dc.contributor.localauthor | Kim, Young-Pil | - |
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- MS-Theses_Ph.D.(박사논문)
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