ECR PECVD법을 이용한 ULSI DRAM Capacitor용 (Pb,La)(Zr,Ti)$O_3$ 박막의 제조 및 특성 평가 연구 = Fabrication and characterization of ECR PECVD (Pb,La)(Zr,Ti)$O_3$ thin films for the charge storage capacitors of ULSI DRAM

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Advisors
이원종researcher천성순researcherLee, Won-JongresearcherChun, Soung-Soonresearcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
1997
Identifier
128165/325007 / 000935197
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 재료공학과, 1997.8, [ iv, 159 p. ]

Keywords

화학증착드; 휘발성 불규칙 접근 메모리; 케페시터; PLZT; Electron cyclotron resonance plasma; Chemical vapor deposition; Dynamic random access memory; Capacitor; 피엘지티; 자기공명 플라즈마

URI
http://hdl.handle.net/10203/50185
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=128165&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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