DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Im, Ho-Bin | - |
dc.contributor.advisor | 임호빈 | - |
dc.contributor.author | Park, Jin-Won | - |
dc.contributor.author | 박진원 | - |
dc.date.accessioned | 2011-12-15T01:01:33Z | - |
dc.date.available | 2011-12-15T01:01:33Z | - |
dc.date.issued | 1994 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=69007&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/50094 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 재료공학과, 1994.2, [ vi, 160 p. ] | - |
dc.description.abstract | Fluorine ion implantation into a channel layer has been introduced, as an alternative method to improve the characteristics of low temperature poly-Si thin film transistors from LPCVD a-Si, and the capacitance-voltage characteristics of poly-Si TFT through the direct measurement with TFT structure have been also presented. Poly-Si films used as a channel layer were prepared by the solid phase crystallization (SPC) of LPCVD a-Si at $600\,^\circ\!C$ in $N_2$ atmosphere. In order to find out the optimum deposition condition of a-Si film, the deposition temperature was varied from 520 to $580\,^\circ\!C$ at a fixed pressure of 500 mtorr, using the mixture of $SiH_4$ and $H_2$ as a source gas. Amorphous Si films were completely crystallized after 2 h annealing. As the deposition temperature increased, the grain size of recrystallized poly-Si films increased first and reached the maximum value of about $3000\mbox{\AA}$ at $540\,^\circ\!C$ and then decreased gradually. Using these films, n- and p-ch poly-Si TFTs were fabricated on thermally oxidized Si substrates. The device performance was mainly dependent on the grain size of recrystallized poly-Si films. The device in a-Si films deposited at $540\,^\circ\!C$ exhibits the highest performance. After hydrogenation by PECVD silicon nitride layer, the characteristics of n- and p-ch TFT were much more improved. Especially, the maximum field effect mobility increased from about 32 to $48 cm^2/V \cdot \sec$ for n-ch and from about 30 to $35 cm^2/V \cdot \sec$ for p-ch TFT. To investigate the effects of $F^+$ implantation into a-Si films on the poly-Si TFT characteristics, first the recrystallization behavior of the $F^+$-implanted a-Si films was examined by XRD, TEM, and Raman spectroscopy. The grain size of Si films increased from about 0.3 to about $2.3 \mu{m}$ with increasing $F^+$ dose. The grain size enhancement was more effective, when the projection range of fluorine ion was placed near the Si/$SiO_2$ interface. Thi... | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | LPCVD. | - |
dc.title | Fabrication and characterization of low temperature poly-Si TFT from LPCVD a-Si | - |
dc.title.alternative | LPCVD a-Si을 이용한 저온 Poly-Si 박막트랜지스터의 제조 및 특성 평가에 관한 연구 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 69007/325007 | - |
dc.description.department | 한국과학기술원 : 재료공학과, | - |
dc.identifier.uid | 000825127 | - |
dc.contributor.localauthor | Park, Jin-Won | - |
dc.contributor.localauthor | 박진원 | - |
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