플라즈마 화학증착법에 의해 제조된 기억소자용 고유전 탄탈륨 산화박막에 관한 연구PECVD $Ta_2O_5$ dielectric thin films for memory devices

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dc.contributor.advisor천성순-
dc.contributor.advisorChun, Soung-Soon-
dc.contributor.author김일-
dc.contributor.authorKim, Il-
dc.date.accessioned2011-12-15-
dc.date.available2011-12-15-
dc.date.issued1995-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=99213&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/49917-
dc.description학위논문(박사) - 한국과학기술원 : 전자재료공학과, 1995.2, [ vi, 136 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title플라즈마 화학증착법에 의해 제조된 기억소자용 고유전 탄탈륨 산화박막에 관한 연구-
dc.title.alternativePECVD $Ta_2O_5$ dielectric thin films for memory devices-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN99213/325007-
dc.description.department한국과학기술원 : 전자재료공학과, -
dc.identifier.uid000895089-
dc.contributor.localauthor김일-
dc.contributor.localauthorKim, Il-
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MS-Theses_Ph.D.(박사논문)
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