플라즈마 화학증착법에 의해 증착된 알루미늄 산화막의 증착 기구와 전기적 특성에 관한 연구A study on the deposition mechanism and the electrical properties of aluminum oxide films deposited by plasma enhanced chemical vapor deposition

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dc.contributor.advisor천성순-
dc.contributor.advisorChun, Soung-Soon-
dc.contributor.author김용천-
dc.contributor.authorKim, Yong-Chun-
dc.date.accessioned2011-12-15-
dc.date.available2011-12-15-
dc.date.issued1993-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=68193&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/49910-
dc.description학위논문(박사) - 한국과학기술원 : 전자재료공학과, 1993.8, [ [iv], 180, [4] p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title플라즈마 화학증착법에 의해 증착된 알루미늄 산화막의 증착 기구와 전기적 특성에 관한 연구-
dc.title.alternativeA study on the deposition mechanism and the electrical properties of aluminum oxide films deposited by plasma enhanced chemical vapor deposition-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN68193/325007-
dc.description.department한국과학기술원 : 전자재료공학과, -
dc.identifier.uid000885080-
dc.contributor.localauthor김용천-
dc.contributor.localauthorKim, Yong-Chun-
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MS-Theses_Ph.D.(박사논문)
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