Hot-Wire CVD 방법을 이용한 (100) Si과 다결정 Si 씨앗층에서의 저온 에피택셜 Si 성장에 관한 연구 = low-temperature growth of epitaxial Si on (100) Si and poly-Si seed layer using hot-wire CVD

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 396
  • Download : 0
DC FieldValueLanguage
dc.contributor.advisor안병태-
dc.contributor.advisorAhn, Byung-Tae-
dc.contributor.author이승렬-
dc.contributor.authorLee, Seung-Ryul-
dc.date.accessioned2011-12-15-
dc.date.available2011-12-15-
dc.date.issued2008-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=303610&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/49855-
dc.description학위논문(박사) - 한국과학기술원 : 신소재공학과, 2008. 8., [ x, 171 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject열선화학기상증착법-
dc.subject에피택셜 실리콘-
dc.subject저온 에피택셜 성장-
dc.subject다결정 실리콘 씨앗층-
dc.subject박막트랜지스터-
dc.subjecthot wire CVD-
dc.subjectepitaxial Si-
dc.subjectlow-temperature epitaxial growth-
dc.subjectpoly-Si seed layer-
dc.subjectthin film transistor-
dc.titleHot-Wire CVD 방법을 이용한 (100) Si과 다결정 Si 씨앗층에서의 저온 에피택셜 Si 성장에 관한 연구 = low-temperature growth of epitaxial Si on (100) Si and poly-Si seed layer using hot-wire CVD-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN303610/325007 -
dc.description.department한국과학기술원 : 신소재공학과, -
dc.identifier.uid020045196-
dc.contributor.localauthor이승렬-
dc.contributor.localauthorLee, Seung-Ryul-
Appears in Collection
MS-Theses_Ph.D.(박사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0