Resistive switching mechanism of $TiO_2$ thin films grown by plasma-enhanced atomic layer deposition = PEALD 방법으로 성장된 $TiO_2$ 박막의 저항변화 메커니즘에 관한 연구

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Resistive random access memory (RRAM) based on transition binary oxides, such as NiO, $TiO_2$, and ZnO, has recently attracted a great deal of increasing attention as a promising candidate for future nonvolatile memory (NVM) due to simple structure, high density, and fast switching. Among a large variety of binary oxides, titanium dioxide ($TiO_2$) has been intensively focused as one of the most promising switching materials due to simple composition, easy fabrication, and versatile resistive switching (RS) properties. Because the definite switching mechanism for switching behaviors is still under debate, it is an important issue to eluciate the microscopic origin of reversible resistive switching observed in nanoscale titanium dioxide thin films for future innovative resistive memory device. Therefore, in this thesis, the microscopic origin of BRS in Al/a-$TiO_2$/Al devices was investigated through transmission electron microscopy (TEM) and the enhanced metal/$\alpha-TiO_2$/metal RRAM devices were proposed via a various configuration of metal electrodes. Using isothermal and temperature-dependent electrical measurements, the resistive switching mechanism of amorphous titanium oxide thin films deposited by the plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes was studied. A bipolar resistive switching (BRS) behavior was only observed in the high temperature region ($\gt 140 K$) and two activation energies (0.055 eV and 0.13 eV) for the carrier transport were found in the ohmic current regime. This discrepancy is attributed to the change of bulk $TiO_2$ Fermi energy level ($E_{f}$) induced by the reversible movement of oxygen ions at the vicinity for the Al top electrode region. A direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films was demonstrated. Through a high-resolution transmission electron microscopy, an analytical TEM technique, and an $\It{in situ}...
Lee, Jeong-Yongresearcher이정용researcher
한국과학기술원 : 신소재공학과,
Issue Date
455396/325007  / 020065163

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2010.08, [ xvi, 168 p. ]


ReRAM; TEM; titanium oxide; resistive switching; atomic layer deposition; 원자층증착방법; 저항변화메모리; 전자현미경; 산화티타늄; 저항변화

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